منابع مشابه
An Integrated ISFET Sensor Array
A monolithically integrated ISFET sensor array and interface circuit are described. A new high-density, low-power source-drain follower was developed for the sensor array. ISFETs were formed by depositing Au/Ti extended-gate electrodes on standard MOSFETs, then thin silicon nitride layers using catalytic chemical vapor deposition and/or SU-8 protective layers were formed on the extended-gate el...
متن کاملDynamic Behaviour of ISFET - based Sensor - Actuator Systems
Rapid acid-base titrations can be performed at the surface of a noble-metal electrode with coulometrically generated ions. An ISFET is used as an indicator electrode to detect the equivalence point in the resulting titration curve. The time needed to reach the equivalence point is typically 0.5 to 10 s for acid/base concentrations ranging from 0.5 x lop3 to 20 x lop3 mol 1 -I. A model is presen...
متن کاملThe ISFET based heparin sensor with a monolayer of protamine as affinity ligand.
The ion-step measuring method was used to determine absolute heparin concentrations in PBS and blood plasma with a Ta2O5 ISFET on to which a monolayer of protamine had been immobilized. Heparin is a highly negatively charged polysaccharide, which is used clinically to delay the clotting of blood. Protamine acts as an affinity ligand for heparin. The response of the ISFET system on a step-wise i...
متن کاملAn ISFET-based anion sensor for the potentiometric detection of organic acids in liquid chromatography
Ž . Ž . An ion-selective field effect transistor ISFET was applied as a potentiometric detector in liquid chromatography LC for the Ž determination of organic acids. The ISFET was prepared by coating the gate insulator of the encapsulated transistor with a poly vinyl . Ž . chloride PVC matrix membrane containing methyltridodecylammoniumchloride, which enables the detection of organic anions. Th...
متن کاملModelling of the migration effect occurring ISFET-based coulometric sensor-actuator system
The migration effect, in addition to diffusion, occurring at an ion-selective field-effect transistor (ISFET)-based coulometric sensor-actuator system has been studied. A diffusion-migration model is presented, based on the numerical solution of the Nemst-Planck equations of which a digital simulation is realized. Corresponding experiments were carried out and compared with the simulation. The ...
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ژورنال
عنوان ژورنال: Procedia Engineering
سال: 2012
ISSN: 1877-7058
DOI: 10.1016/j.proeng.2012.04.190